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MURT10060R

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GeneSiC Semiconductor MURT10060R

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
MURT10060R
Description
DIODE ARRAY GP REV POLAR 3TOWER
Catalog
Diodes - Rectifiers - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MURT10060R PDF
MURT10060R Tech Specifications
Series-
PackageBulk
Part StatusActive
Diode Configuration-
Diode TypeStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io) (per Diode)100A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 100 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75 ns
Current - Reverse Leakage @ Vr25 µA @ 50 V
Operating Temperature - Junction-40°C ~ 175°C
Mounting TypeChassis Mount
Package / CaseThree Tower
Supplier Device PackageThree Tower
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