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MURTA20060R

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GeneSiC Semiconductor MURTA20060R

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
MURTA20060R
Description
DIODE GEN PURP 600V 100A 3 TOWER
Catalog
Diodes - Rectifiers - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MURTA20060R PDF
In Stock
213
MURTA20060R Tech Specifications
Series-
PackageBulk
Part StatusActive
Diode Configuration1 Pair Common Anode
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io) (per Diode)100A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 100 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr25 µA @ 600 V
Operating Temperature - Junction-55°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseThree Tower
Supplier Device PackageThree Tower
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