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IRLR3636PBF

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Rochester Electronics IRLR3636PBF

Manufacturer :
Rochester Electronics
Mfr. Part # :
IRLR3636PBF
Description
MOSFET N-CH 60V 50A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRLR3636PBF PDF
IRLR3636PBF Tech Specifications
SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 4.5 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3.779 pF @ 50 V
FET Feature-
Power Dissipation (Max)143W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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Request Quote Now

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