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FQI10N60CTU

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Rochester Electronics FQI10N60CTU

Manufacturer :
Rochester Electronics
Mfr. Part # :
FQI10N60CTU
Description
MOSFET N-CH 600V 9.5A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQI10N60CTU PDF
FQI10N60CTU Tech Specifications
SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2.04 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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