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SCT10N120

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STMicroelectronics SCT10N120

Manufacturer :
STMicroelectronics
Mfr. Part # :
SCT10N120
Description
SICFET N-CH 1200V 12A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SCT10N120 PDF
SCT10N120 Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 400 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
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