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TSM60NB190CI C0G

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TSC (Taiwan Semiconductor) TSM60NB190CI C0G

Manufacturer :
TSC (Taiwan Semiconductor)
Mfr. Part # :
TSM60NB190CI C0G
Description
MOSFET N-CH 600V 18A ITO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TSM60NB190CI C0G PDF
TSM60NB190CI C0G Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1273 pF @ 100 V
FET Feature-
Power Dissipation (Max)33.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab
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