Series | Automotive, AEC-Q101 | |
Package | Tube | |
Part Status | Not For New Designs | |
FET Type | N-Channel | |
Technology | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 62mOhm @ 22A, 8V | |
Vgs(th) (Max) @ Id | 2.6V @ 700µA | |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V | |
Vgs (Max) | ±18V | |
Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
Package / Case | TO-247-3 |
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