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BSC196N10NSGATMA1

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IR (Infineon Technologies) BSC196N10NSGATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BSC196N10NSGATMA1
Description
MOSFET N-CH 100V 8.5A/45A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSC196N10NSGATMA1 PDF
In Stock
10431
BSC196N10NSGATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 50 V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN
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