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RF4E110BNTR

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ROHM Semiconductor RF4E110BNTR

Manufacturer :
ROHM Semiconductor
Mfr. Part # :
RF4E110BNTR
Description
MOSFET N-CH 30V 11A HUML2020L8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RF4E110BNTR PDF
RF4E110BNTR Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.1mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 15 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageHUML2020L8
Package / Case8-PowerUDFN
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