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TK62J60W,S1VQ

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Toshiba Electronic Devices and Storage Corporation TK62J60W,S1VQ

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK62J60W,S1VQ
Description
MOSFET N-CH 600V 61.8A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK62J60W,S1VQ PDF
TK62J60W,S1VQ Tech Specifications
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs38mOhm @ 30.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)400W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3
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