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TP65H300G4LSG

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Transphorm TP65H300G4LSG

Manufacturer :
Transphorm
Mfr. Part # :
TP65H300G4LSG
Description
GANFET N-CH 650V 6.5A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TP65H300G4LSG PDF
TP65H300G4LSG Tech Specifications
Series-
PackageTray
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 8 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
FET Feature-
Power Dissipation (Max)21W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (8x8)
Package / Case3-PowerDFN
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