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SI2337DS-T1-GE3

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Vishay / Siliconix SI2337DS-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI2337DS-T1-GE3
Description
MOSFET P-CH 80V 2.2A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI2337DS-T1-GE3 PDF
In Stock
1012
SI2337DS-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 40 V
FET Feature-
Power Dissipation (Max)760mW (Ta), 2.5W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
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Request Quote Now

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