Rochester Electronics NVB6413ANT4G

Manufacturer :: Rochester Electronics

Mfr. Part # :: NVB6413ANT4G

Description: MOSFET N-CH 100V 42A D2PAK-3

Catalog: Transistors - FETs, MOSFETs - Single

Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DataSheet: NVB6413ANT4G PDF

NVB6413ANT4G Tech Specifications

Series		-
Package		Bulk
Part Status		Obsolete
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)		100 V
Current - Continuous Drain (Id) @ 25°C		42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)		10V
Rds On (Max) @ Id, Vgs		28mOhm @ 42A, 10V
Vgs(th) (Max) @ Id		4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs		51 nC @ 10 V
Vgs (Max)		±20V
Input Capacitance (Ciss) (Max) @ Vds		1.8 pF @ 25 V
FET Feature		-
Power Dissipation (Max)		136W (Tc)
Operating Temperature		-55°C ~ 175°C (TJ)
Mounting Type		Surface Mount
Supplier Device Package		D2PAK-3
Package / Case		TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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