Vishay / Siliconix SI2312BDS-T1-GE3

Manufacturer :: Vishay / Siliconix

Mfr. Part # :: SI2312BDS-T1-GE3

Description: MOSFET N-CH 20V 3.9A SOT23-3

Catalog: Transistors - FETs, MOSFETs - Single

Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DataSheet: SI2312BDS-T1-GE3 PDF

SI2312BDS-T1-GE3 Tech Specifications

Series		TrenchFET®
Package		Tape & Reel (TR)Cut Tape (CT)
Part Status		Active
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)		20 V
Current - Continuous Drain (Id) @ 25°C		3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)		1.8V, 4.5V
Rds On (Max) @ Id, Vgs		31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id		850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs		12 nC @ 4.5 V
Vgs (Max)		±8V
Input Capacitance (Ciss) (Max) @ Vds		-
FET Feature		-
Power Dissipation (Max)		750mW (Ta)
Operating Temperature		-55°C ~ 150°C (TJ)
Mounting Type		Surface Mount
Supplier Device Package		SOT-23-3 (TO-236)
Package / Case		TO-236-3, SC-59, SOT-23-3

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