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NVMYS2D2N06CLTWG

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Sanyo Semiconductor/ON Semiconductor NVMYS2D2N06CLTWG

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NVMYS2D2N06CLTWG
Description
MOSFET N-CH 60V 31A/185A LFPAK4
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVMYS2D2N06CLTWG PDF
NVMYS2D2N06CLTWG Tech Specifications
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4850 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 134W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK4 (5x6)
Package / CaseSOT-1023, 4-LFPAK
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