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FDFS2P102

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Rochester Electronics FDFS2P102

Manufacturer :
Rochester Electronics
Mfr. Part # :
FDFS2P102
Description
MOSFET P-CH 20V 3.3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDFS2P102 PDF
FDFS2P102 Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs125mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)
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