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IRF3710ZLPBF

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Rochester Electronics IRF3710ZLPBF

Manufacturer :
Rochester Electronics
Mfr. Part # :
IRF3710ZLPBF
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRF3710ZLPBF PDF
IRF3710ZLPBF Tech Specifications
SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.9 pF @ 25 V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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