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TK9J90E,S1E

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Toshiba Electronic Devices and Storage Corporation TK9J90E,S1E

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK9J90E,S1E
Description
MOSFET N-CH 900V 9A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK9J90E,S1E PDF
In Stock
554
TK9J90E,S1E Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3
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Request Quote Now

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