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TK58A06N1,S4X

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Toshiba Electronic Devices and Storage Corporation TK58A06N1,S4X

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK58A06N1,S4X
Description
MOSFET N-CH 60V 58A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK58A06N1,S4X PDF
TK58A06N1,S4X Tech Specifications
SeriesU-MOSVIII-H
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 30 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack
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Request Quote Now

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