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IPN80R3K3P7ATMA1

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IR (Infineon Technologies) IPN80R3K3P7ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPN80R3K3P7ATMA1
Description
MOSFET N-CH 800V 1.9A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPN80R3K3P7ATMA1 PDF
IPN80R3K3P7ATMA1 Tech Specifications
SeriesCoolMOS™ P7
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs5.8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 500 V
FET Feature-
Power Dissipation (Max)6.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-3
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