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NVD5117PLT4G

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Rochester Electronics NVD5117PLT4G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NVD5117PLT4G
Description
MOSFET P-CH 60V 11A/61A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVD5117PLT4G PDF
In Stock
48168
NVD5117PLT4G Tech Specifications
SeriesAutomotive, AEC-Q101
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 29A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4.8 nF @ 25 V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 118W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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