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IPP80N06S2L09AKSA2

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Rochester Electronics IPP80N06S2L09AKSA2

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPP80N06S2L09AKSA2
Description
OPTLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP80N06S2L09AKSA2 PDF
IPP80N06S2L09AKSA2 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 52A, 10V
Vgs(th) (Max) @ Id2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.62 pF @ 25 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3
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