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NVB60N06T4G

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Rochester Electronics NVB60N06T4G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NVB60N06T4G
Description
MOSFET N-CH 60V 60A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVB60N06T4G PDF
NVB60N06T4G Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds3.22 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 150W (Tj)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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