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SCTW100N65G2AG

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STMicroelectronics SCTW100N65G2AG

Manufacturer :
STMicroelectronics
Mfr. Part # :
SCTW100N65G2AG
Description
SICFET N-CH 650V 100A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SCTW100N65G2AG PDF
In Stock
1549
SCTW100N65G2AG Tech Specifications
SeriesAutomotive, AEC-Q101
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs162 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3315 pF @ 520 V
FET Feature-
Power Dissipation (Max)420W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
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Request Quote Now

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