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IQE006NE2LM5ATMA1

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IR (Infineon Technologies) IQE006NE2LM5ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IQE006NE2LM5ATMA1
Description
MOSFET N-CH 25V 41A/298A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IQE006NE2LM5ATMA1 PDF
IQE006NE2LM5ATMA1 Tech Specifications
Series*
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82.1 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5453 pF @ 12 V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePG-TSON-8-4
Package / Case8-PowerTDFN
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