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IPI80N06S4L07AKSA2

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Rochester Electronics IPI80N06S4L07AKSA2

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPI80N06S4L07AKSA2
Description
MOSFET N-CH 60V 80A TO262-3-1
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI80N06S4L07AKSA2 PDF
IPI80N06S4L07AKSA2 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5.68 pF @ 25 V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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