Series | HEXFET® | |
Package | Bulk | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 40 V | |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.3V, 10V | |
Rds On (Max) @ Id, Vgs | 4mOhm @ 95A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | D-PAK (TO-252AA) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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