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SISS10DN-T1-GE3

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Vishay / Siliconix SISS10DN-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SISS10DN-T1-GE3
Description
MOSFET N-CH 40V 60A PPAK 1212-8S
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SISS10DN-T1-GE3 PDF
In Stock
3461
SISS10DN-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3750 pF @ 20 V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S
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