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SI3460BDV-T1-E3

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Vishay / Siliconix SI3460BDV-T1-E3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI3460BDV-T1-E3
Description
MOSFET N-CH 20V 8A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI3460BDV-T1-E3 PDF
In Stock
16508
SI3460BDV-T1-E3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds860 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6
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Request Quote Now

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