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NTD4979N-35G

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Rochester Electronics NTD4979N-35G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NTD4979N-35G
Description
MOSFET N-CH 30V 9.4A/41A I-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NTD4979N-35G PDF
In Stock
800
NTD4979N-35G Tech Specifications
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds837 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.38W (Ta), 26.3W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
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Request Quote Now

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