Series | HEXFET® | |
Package | Bulk | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25 V | |
Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 210A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.4mOhm @ 38A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5.79 pF @ 13 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DIRECTFET™ MX | |
Package / Case | DirectFET™ Isometric MX |
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