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RMD1N25ES9

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Rectron USA RMD1N25ES9

Manufacturer :
Rectron USA
Mfr. Part # :
RMD1N25ES9
Description
MOSFET N-CHANNEL 25V 1.1A SOT363
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RMD1N25ES9 PDF
RMD1N25ES9 Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds30 pF @ 10 V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-363
Package / Case6-TSSOP, SC-88, SOT-363
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Request Quote Now

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