| Series | Automotive, AEC-Q101, HEXFET® | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 150µA | |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 250W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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