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IPS80R1K4P7AKMA1

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IR (Infineon Technologies) IPS80R1K4P7AKMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPS80R1K4P7AKMA1
Description
MOSFET N-CH 800V 4A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPS80R1K4P7AKMA1 PDF
IPS80R1K4P7AKMA1 Tech Specifications
SeriesCoolMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureSuper Junction
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak
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