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FDP2D9N12C

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Sanyo Semiconductor/ON Semiconductor FDP2D9N12C

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDP2D9N12C
Description
PTNG 120V N-FET TO220
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDP2D9N12C PDF
In Stock
3200
FDP2D9N12C Tech Specifications
SeriesPowerTrench®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 686µA
Gate Charge (Qg) (Max) @ Vgs109 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8894 pF @ 60 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 333W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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