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TP65H480G4JSG-TR

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Transphorm TP65H480G4JSG-TR

Manufacturer :
Transphorm
Mfr. Part # :
TP65H480G4JSG-TR
Description
GANFET N-CH 650V 3.6A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TP65H480G4JSG-TR PDF
In Stock
328
TP65H480G4JSG-TR Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs8 V @ 8 nC
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds400 V @ 760 pF
FET Feature-
Power Dissipation (Max)13.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (5x6)
Package / Case3-SMD, Flat Lead
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