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SIRA10BDP-T1-GE3

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Vishay / Siliconix SIRA10BDP-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIRA10BDP-T1-GE3
Description
MOSFET N-CH 30V 30A/60A PPAK SO8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIRA10BDP-T1-GE3 PDF
In Stock
2985
SIRA10BDP-T1-GE3 Tech Specifications
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36.2 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1710 pF @ 15 V
FET Feature-
Power Dissipation (Max)5W (Ta), 43W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
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