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NVD5C648NLT4G

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Sanyo Semiconductor/ON Semiconductor NVD5C648NLT4G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NVD5C648NLT4G
Description
MOSFET N-CH 60V 18A/89A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVD5C648NLT4G PDF
In Stock
40000
NVD5C648NLT4G Tech Specifications
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.1mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 72W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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