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TK39N60W,S1VF

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Toshiba Electronic Devices and Storage Corporation TK39N60W,S1VF

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK39N60W,S1VF
Description
MOSFET N CH 600V 38.8A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK39N60W,S1VF PDF
In Stock
264
TK39N60W,S1VF Tech Specifications
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)270W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
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