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IRFH4210DTRPBF

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Rochester Electronics IRFH4210DTRPBF

Manufacturer :
Rochester Electronics
Mfr. Part # :
IRFH4210DTRPBF
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRFH4210DTRPBF PDF
IRFH4210DTRPBF Tech Specifications
SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C44A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4.812 pF @ 13 V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6)
Package / Case8-PowerTDFN
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