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FQI13N06LTU

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Rochester Electronics FQI13N06LTU

Manufacturer :
Rochester Electronics
Mfr. Part # :
FQI13N06LTU
Description
MOSFET N-CH 60V 13.6A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQI13N06LTU PDF
In Stock
2955
FQI13N06LTU Tech Specifications
SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs110mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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