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IPB120N10S403ATMA1

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IR (Infineon Technologies) IPB120N10S403ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB120N10S403ATMA1
Description
MOSFET N-CH 100V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB120N10S403ATMA1 PDF
IPB120N10S403ATMA1 Tech Specifications
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10120 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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