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SQD19P06-60L_GE3

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Vishay / Siliconix SQD19P06-60L_GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SQD19P06-60L_GE3
Description
MOSFET P-CH 60V 20A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SQD19P06-60L_GE3 PDF
SQD19P06-60L_GE3 Tech Specifications
SeriesAutomotive, AEC-Q101, TrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1490 pF @ 25 V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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