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IPI020N06NAKSA1

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Rochester Electronics IPI020N06NAKSA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPI020N06NAKSA1
Description
OPTLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI020N06NAKSA1 PDF
IPI020N06NAKSA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7.8 pF @ 30 V
FET Feature-
Power Dissipation (Max)3W (Ta), 214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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