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IRFBG30PBF-BE3

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Vishay / Siliconix IRFBG30PBF-BE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
IRFBG30PBF-BE3
Description
MOSFET N-CH 1000V 3.1A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRFBG30PBF-BE3 PDF
IRFBG30PBF-BE3 Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds980 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
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