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IPB60R099C7ATMA1

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IR (Infineon Technologies) IPB60R099C7ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB60R099C7ATMA1
Description
MOSFET N-CH 650V 22A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB60R099C7ATMA1 PDF
IPB60R099C7ATMA1 Tech Specifications
SeriesCoolMOS™ C7
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1819 pF @ 400 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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