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SIR106DP-T1-RE3

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Vishay / Siliconix SIR106DP-T1-RE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIR106DP-T1-RE3
Description
MOSFET N-CH 100V 16.1A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIR106DP-T1-RE3 PDF
In Stock
757
SIR106DP-T1-RE3 Tech Specifications
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3610 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
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