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SIHJ10N60E-T1-GE3

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Vishay / Siliconix SIHJ10N60E-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHJ10N60E-T1-GE3
Description
MOSFET N-CH 600V 10A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHJ10N60E-T1-GE3 PDF
SIHJ10N60E-T1-GE3 Tech Specifications
SeriesE
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds784 pF @ 100 V
FET Feature-
Power Dissipation (Max)89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / Case8-PowerTDFN
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