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IPS65R1K0CEAKMA1

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Rochester Electronics IPS65R1K0CEAKMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPS65R1K0CEAKMA1
Description
MOSFET N-CH 650V 4.3A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPS65R1K0CEAKMA1 PDF
IPS65R1K0CEAKMA1 Tech Specifications
SeriesCoolMOS™ CE
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs15.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V
FET Feature-
Power Dissipation (Max)37W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak
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