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FDS2170N3

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Rochester Electronics FDS2170N3

Manufacturer :
Rochester Electronics
Mfr. Part # :
FDS2170N3
Description
MOSFET N-CH 200V 3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDS2170N3 PDF
FDS2170N3 Tech Specifications
SeriesPowerTrench®
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs128mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.292 pF @ 100 V
FET Feature-
Power Dissipation (Max)3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)
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